Elementary

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

• Diode type Zener
• Power 1.3W
• Zener voltage 15V
• Case DO41
• Mounting THT
• Tolerance ±5%

Metal film resistors

Metal film resistors have a thin metal layer as resistive element on a non-conducting body. They are amongst the most common types of axial resistors. Other film type resistors are carbon film and thick and thin film resistors. In most literature referrals to metal film, usually it is a cylindrical axial resistor. However, thin film chip resistors use the same manufacturing principle for the metal layer.

The L7805CV is a three-terminal positive Voltage Regulator with several fixed output voltages, making it useful in a wide range of applications. These regulators can provide local on-card regulation, eliminating the distribution problems associated with single point regulation. Each type embeds internal current limiting, thermal shut-down and safe area protection, making it essentially indestructible. If adequate heat sinking is provided, they can deliver over 1A output current.

This series of plastic, medium-power NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

Features

• DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc

• BD 135, 137, 139 are complementary with BD 136, 138, 140

If you've ever wondered how to control the headlight of a car from a microcontroller, a MOSFET is what you need. The FQP27P06 is a very common MOSFET with very low on-resistance and a control voltage (aka gate voltage) that is compatible with most 5V microcontroller or mechanical switches. This allows you to control high-power devices with very low-power control mechanisms.

This is the P2N2222A, an NPN silicon BJT (Bipolar Junction Transistor). This little transistor can help in your project by being used to help drive large loads or amplifying or switching applications. The P2N2222A is specifically rated at 40V and 600mA max.

Characteristics of the bipolar transistor S8050

• Type - n-p-n
• Collector-Emitter Voltage: 25 V
• Collector-Base Voltage: 40 V
• Emitter-Base Voltage: 5 V
• Collector Current: 0.5 A
• Collector Dissipation - 0.625 W
• DC Current Gain (hfe) - 85 to 300
• Transition Frequency - 150 MHz
• Operating and Storage Junction Temperature Range -65 to +150 °

Characteristics of the bipolar transistor S8550

• Type - p-n-p
• Collector-Emitter Voltage: -25 V
• Collector-Base Voltage: -40 V
• Emitter-Base Voltage: -5 V
• Collector Current: -0.5 A
• Collector Dissipation - 0.625 W
• DC Current Gain (hfe) - 85 to 300
• Transition Frequency - 150 MHz
• Operating and Storage Junction Temperature Range -65 to +150