S8050 Bipolar Transistor

Characteristics of the bipolar transistor S8050

• Type - n-p-n
• Collector-Emitter Voltage: 25 V
• Collector-Base Voltage: 40 V
• Emitter-Base Voltage: 5 V
• Collector Current: 0.5 A
• Collector Dissipation - 0.625 W
• DC Current Gain (hfe) - 85 to 300
• Transition Frequency - 150 MHz
• Operating and Storage Junction Temperature Range -65 to +150 °C
• Package - TO-92

Pin Configuration (Pinout)

The S8050 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.

Classification of hFE

S8050 can have a current gain anywhere between 85 and 300. The gain of a S8050B will be in the range from 85 to 160, S8050C - range from 120 to 200, S8050D - range from 160 to 300.

Complementary

The complementary p-n-p transistor to S8050 is S8550.