transistor

This series of plastic, medium-power NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

Features

• DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc

• BD 135, 137, 139 are complementary with BD 136, 138, 140

This is the P2N2222A, an NPN silicon BJT (Bipolar Junction Transistor). This little transistor can help in your project by being used to help drive large loads or amplifying or switching applications. The P2N2222A is specifically rated at 40V and 600mA max.

Characteristics of the bipolar transistor S8050

• Type - n-p-n
• Collector-Emitter Voltage: 25 V
• Collector-Base Voltage: 40 V
• Emitter-Base Voltage: 5 V
• Collector Current: 0.5 A
• Collector Dissipation - 0.625 W
• DC Current Gain (hfe) - 85 to 300
• Transition Frequency - 150 MHz
• Operating and Storage Junction Temperature Range -65 to +150 °

Characteristics of the bipolar transistor S8550

• Type - p-n-p
• Collector-Emitter Voltage: -25 V
• Collector-Base Voltage: -40 V
• Emitter-Base Voltage: -5 V
• Collector Current: -0.5 A
• Collector Dissipation - 0.625 W
• DC Current Gain (hfe) - 85 to 300
• Transition Frequency - 150 MHz
• Operating and Storage Junction Temperature Range -65 to +150