S8550 Bipolar Transistor
Characteristics of the bipolar transistor S8550
- Type - p-n-p
- Collector-Emitter Voltage: -25 V
- Collector-Base Voltage: -40 V
- Emitter-Base Voltage: -5 V
- Collector Current: -0.5 A
- Collector Dissipation - 0.625 W
- DC Current Gain (hfe) - 85 to 300
- Transition Frequency - 150 MHz
- Operating and Storage Junction Temperature Range -65 to +150